http://www.ncepower.com wuxi nce power semiconductor co., ltd page 1 v1.0 NCE25GD135T pb free product NCE25GD135T 1350v, 25a, trench npt igbt features z trench npt( non punch through) igbt z high speed switching z low saturation voltage: v ce(sat) =2.0v@i c =25a z high input impedance applications z inductive heating, microwav e oven, inverter, ups, etc. z soft switching applications general description using advanced trench npt technology, nce?s 1350v igbts offers superior conducti on and switching performances, and easy parallel operation with exceptional avalanche rugged- ness. this device is designed fo r soft switching applications. absolute maximum ratings notes: 1. repetitive rating, pulse width lim ited by max. junction temperature symbol description ratings units v ces collector to emitter voltage 1350 v v ges gate to emitter voltage +/-30 v continuous collector current @t c =25c 50 a i c continuous collector current @t c =100c 25 a i cm (1) pulsed collector current 90 a i f diode continuous forward current @t c =100c 25 i fm diode maximum forward current 150 a maximum power dissipation @t c =25c 312 w p d maximum power dissipation @t c =100c 125 w t j operating junction temperature -55 to +150 c t stg storage temperature range -55 to +150 c t l maximum lead temp. for soldering purposes, 1/8" from case for 5seconds 300 c
http://www.ncepower.com wuxi nce power semiconductor co., ltd page 2 v1.0 NCE25GD135T pb free product thermal characteristics symbol parameter typ. max. units r jc thermal resistance, junction to case - 0.4 c/w r ja thermal resistance, junction to ambient - 40 c/w electrical characteristics of the igbt t c =25 c symbol parameter test conditions min. typ. max. units off characteristics bv ces collector to emitter breakdown voltage v ge =0v, ic=1ma 1350 - - v i ces collector cut-off current v ce =1350v, v ge =0v - - 1 ma i ges g-e leakage current v ge =25v, v ce =0v - - +/-250 na on characteristics v ge(th) g-e threshold voltage i c =25ma, v ce =v ge 4.0 5.5 7.0 v i c =25a, v ge =15v t c =25c - 2 2.5 v v ce(sat) collector to emitter saturation voltage i c =25a, v ge =15v t c =125c - 2.15 - v dynamic characteristics c ies input capacitance - 3700 - pf c oes output capacitance - 130 - pf c res reverse transfer capacitance v ce =30v, v ge =0v, f=1mhz - 80 - pf switching characteristics t d(on) turn-on delay time - 50 - ns t r rise time - 60 90 ns t d(off) turn-off delay time - 190 - ns t f fall time - 100 180 ns e on turn-on switching loss - 4.1 6.2 mj e off turn-off switching loss - 0.96 1.5 mj e ts total switching loss v cc =600v,i c =25a, r g =10 ? ,v ge =15v, inductive load, t c =25c - 5.06 7.7 mj t d(on) turn-on delay time - 50 - ns t r rise time - 60 - ns t d(off) turn-off delay time - 200 - ns t f fall time - 154 - ns e on turn-on switching loss - 4.3 6.9 mj e off turn-off switching loss - 1.5 2.4 mj e ts total switching loss v cc =600v,i c =25a, r g =10 ? ,v ge =15v, inductive load, t c =125c - 5.8 9.3 mj q g total gate charge - 200 300 nc q ge gate to emitter charge - 15 23 nc q gc gate to collector charge v cc =600v,i c =25a, v ge =15v - 100 150 nc
http://www.ncepower.com wuxi nce power semiconductor co., ltd page 3 v1.0 NCE25GD135T pb free product electrical characteristics of diode t c =25 c symbol parameter test conditions min. typ. max. units t c =25c - 2.0 3.0 v v fm diode forward voltage i f =25a t c =125c - 2.1 v t c =25c - 235 350 ns t rr diode reverse recovery time t c =125c - 300 ns t c =25c - 27 40 a i rr diode peak reverse recovery current t c =125c - 31 a t c =25c - 3130 4700 uc q rr diode reverse recovery charge i f =25a, di/dt=200a/us t c =125c - 4650 uc
http://www.ncepower.com wuxi nce power semiconductor co., ltd page 4 v1.0 NCE25GD135T pb free product typical performance characteristics figure 1. typical output characteristics figure 2. typical saturation voltage characteristics figure 3. saturation voltage vs. case figure 4. saturation voltage vs. v ge temperature at variant current level figure 5. saturation voltage vs. v ge figure 6. saturation voltage vs. v ge collector current, i c (a) collector emitter voltage, v ce (v) collector emitter voltage, v ce (v) collector current i c, (a) collector emitter voltage, vce(v) case temperature, tc(c) collector emitter voltage, vce(v) gate emitter voltage, v ge ( v) gate emitter voltage, v ge ( v) gate emitter voltage, v ge ( v) collector emitter voltage, vce(v) collector emitter voltage, vce(v)
http://www.ncepower.com wuxi nce power semiconductor co., ltd page 5 v1.0 NCE25GD135T pb free product typical performance characteristics (continued) figure 7. capacitance characteristics figure 8. turn-on characteristics vs. gate resistance figure 9. turn-off characteristics vs. gate figure 10. switching loss vs. gate resistance resistance figure 11. turn-on characteristics vs. collector figure 12. turn-off characteristics vs. current collector current ca p acitance (p f ) gate resistance, r g ( ? ) switchin g time ( ns ) collector emitter voltage, v ce (v) switchin g time ( ns ) gate resistance, r g ( ? ) gate resistance, r g ( ? ) switchin g loss ( mj ) switchin g loss ( mj ) switchin g loss ( mj ) collector current, i c (a) collector current, i c (a)
http://www.ncepower.com wuxi nce power semiconductor co., ltd page 6 v1.0 NCE25GD135T pb free product typical performance characteristics (continued) figure 13. switching loss vs. collector current figure14. gate charge characteristics figure 15. soa characteristics figure 16. turn-off soa figure 17. transient thermal impedance of igbt switchin g loss ( mj ) collector current, i c (a) gate-emitter volta g e ( v ) gate charge, qg (nc) collector current, i c (a) collector emitter voltage, (v) collector current, i c (a) collector emitter voltage, (v)
http://www.ncepower.com wuxi nce power semiconductor co., ltd page 7 v1.0 NCE25GD135T pb free product to-247 package information dimensions in millimeters dimensions in inches symbol min. max. min. max. a 4.850 5.150 0.191 0.200 a1 2.200 2.600 0.087 0.102 b 1.000 1.400 0.039 0.055 b1 2.800 3.200 0.110 0.126 b2 1.800 2.200 0.071 0.087 c 0.500 0.700 0.020 0.028 c1 1.900 2.100 0.075 0.083 d 15.450 15.750 0.608 0.620 e1 3.500 ref 0.138 ref e2 3.600 ref 0.142 ref l 40.900 41.300 1.610 1.626 l1 24.800 25.100 0.976 0.988 l2 20.300 20.600 0.799 0.811 7.100 7.300 0.280 0.287 e 5.450 typ 0.215 typ h 5.980 ref 0.235 ref
http://www.ncepower.com wuxi nce power semiconductor co., ltd page 8 v1.0 NCE25GD135T pb free product attention: any and all nce products described or contained herein do not have specifications that c an handle applications that require extremely high levels of reliability, such as life-support sy stems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your nce representative nearest yo u before using any nce products descr ibed or contained herein in such applications. nce assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, oper ating condition ranges, or other parameters) listed in products specifications of any and all nce products described or contained herein. specifications of any and all nce pr oducts described or contained herein sti pulate the performance, characteristics, and functions of the described products in the independent state, and ar e not guarantees of the performance, characteristics, and functions of the described products as mounted in the cu stomer?s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mount ed in the customer?s products or equipment. nce power semiconductor co.,ltd. st rives to supply high-qualit y high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could enda nger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equi pment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all nce products(including technical data, servic es) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorit ies concerned in accordance with the above law. no part of this publication may be reproduced or transmi tted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information st orage or retrieval system, or otherwise, without the prior written permission of nce po wer semiconductor co.,ltd. information (including circuit diagrams and circuit param eters) herein is for example only ; it is not guaranteed for volume production. nce believes information herein is accu rate and reliable, but no guaran tees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. any and all information described or contained herein are subject to change without notice due to product/technology improvement, et c. when designing equipment, refer to t he "delivery specification" for the nce product that you intend to use. this catalog provides information as of mar. 2010. specifications and info rmation herein are subject to change without notice.
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